The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1976
Filed:
Dec. 05, 1974
Ferdinand Carl Duigon, East Brunswick, NJ (US);
Shing-gong Liu, Princeton, NJ (US);
RCA Corporation, New York, NY (US);
Abstract
A planar TRAPATT diode includes a substrate selected from an area of a silicon wafer, a diffused region within the area, a mask of an insulating layer of SiO.sub.2, and a conductive layer of polycrystalline silicon. The silicon wafer includes a doped P region adjacent to the surface thereof and a heavily doped P.sup.+ region adjacent to the P region. The TRAPATT junction is a selected area below the surface at the interface between the diffused region, which is N.sup.+, and the P region. The polycrystalline silicon layer is the dopant source for the N.sup.+ diffused region and contacts the wafer in the selected area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile