The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1976
Filed:
Mar. 05, 1975
Hiromitsu Takagi, Muko, JA;
Gota Kano, Nagaoka-kyo, JA;
Matsushita Electronics Corporation, Kadoma, JA;
Abstract
Both source-electrodes (S1 and S2) or both drain-electrodes of a pair of field-effect transistors (FETs) (F1 and F2) of n-channel type and p-channel type, respectively, both to be electrically actuated in a depletion mode are connected to each other, or the source of one FET and the drain of the other FET are connected to each other, through a variable resistance element (F3) inbetween, whereby the pair of FETs (F1 and F3) are series-connected through the variable resistance element (F3) inbetween, the gate-electrode (g1 or g2) of each FET is connected to the drain-electrode (d2 or d1) or the source-electrode of the other FET (F2 or F1) that is not connected to the variable resistance element (F3), and a pair of external terminals (1 and 2) are connected to said gate electrodes (g1, g2) those are connected to said drain electrodes (d2 and d1) or source electrodes. When a voltage of specified range is applied across both non-series-connected electrodes, i.e., the two external terminals, the resulting voltage-current characteristic presents a so-called dynatron-type characteristic, producing a negative-resistance phenomenon, and a curve of voltage-current characteristic changes responding to the value of control signal to the variable resistance element. Since this device is a negative resistance of variable characteristic this device can be utilized for switching, signal relaying, memorization and other various controlling or data processing uses.