The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1976
Filed:
Jul. 09, 1975
Applicant:
Inventor:
Shunji Shimada, Kodaira, JA;
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; G08B / ; G02F / ; H03K / ;
U.S. Cl.
CPC ...
307270 ; 307205 ; 307209 ; 307D / ; 340336 ; 3501 / ;
Abstract
A driver circuit comprises an output circuit having a depletion type MOSFET and an enhancement type MOSFET connected in series with the depletion type FET. A voltage V1 is supplied to the drain of the depletion type FET and a voltage V2 is supplied to the source of the enhancement type FET, wherein .vertline.V1.vertline. > .vertline.V2.vertline. > .vertline.V th D.vertline., VthD being the threshold voltage of the depletion type MOSFET. A control signal is supplied directly to the gate of the enhancement type FET and, through an inverter, to the gate of the depletion type FET. As a result, a push-pull driver circuit using E/D MOSFETs is obtained.