The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1976
Filed:
Sep. 04, 1975
George Edward Alcorn, Silver Spring, MD (US);
James Downer Feeley, Marshall, VA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process is disclosed for controlling the inclination of the side wall of a layer of sputtered quartz etched by a reactive plasma etching technique. The process consists of coating a selected fractional area of the backside of a silicon wafer to be etched, with a material resistant to plasma etching. Then coating the front side of the wafer bearing a layer of sputtered quartz, with a coating of organic material having a temperature dependent plasma etching rate, so as to delineate locations in the sputtered quartz layer for the formation of via holes. Next, exposing the wafer in a reactive plasma etching chamber. The inclination of the side wall of the via hole etched in the sputtered quartz layer by the reactive plasma etching step, may be controlled through the correlation of the selected area of exposure of the backside of the wafer, to the operating temperature under which the etching process proceeds which, in turn, governs the rate at which the organic layer is etched around the periphery of the via hole.