The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1976
Filed:
Feb. 28, 1975
Mituhiko Ueno, Fujisawa, JA;
Masataka Hirasawa, Yokohama, JA;
Abstract
A method of manufacturing semiconductor devices is disclosed which includes the steps of forming an insulating film on one surface of a semiconductor substrate, removing the insulating film selectively to expose at least a portion of one surface of the semiconductor substrate, forming a low temperature oxide film containing a first diffusion source which has a higher etch rate than the insulating film onto at least a part of the exposed surface while leaving the rest of the surface exposed, and heating the substrate to diffuse the first diffusion source film from the oxide film into the substrate and to diffuse a second diffusion source through the exposed surface into the substrate thereby at least two diffused regions can be formed on the substrate without relative displacement.