The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1976
Filed:
Feb. 24, 1975
David F Allison, Los Altos, CA (US);
Signetics Corporation, Sunnyvale, CA (US);
Abstract
Semiconductor structure formed from a semiconductor body having an impurity of one conductivity type therein and having a major surface lying in a <100> plane. Moats are provided which extend through the major surface and have spaced side walls lying in a plane different from the <100> plane and at said surface define spaced islands. Layers of protective material are formed on the side walls of the moats. Regions of said impurity of one conductivity type and of greater concentration than that in the body extend downwardly into the body from the protective layers. An insulating material fills the moats and devices are formed in the islands. An insulating layer is formed on said surface and lead means is provided on the insulating layer and extends through the insulating layer to make contact to the devices and extends over the material in said moats to interconnect the devices in the spaced islands. It is desirable that the moats have a generally rectangular configuration with inner and outer perimeters and inner and outer corners. The outer corners are defined by diagonal, generally planar wall portions which lie in either the <110> plane or the <111> plane. If desired, the bottom of the moats can extend downwardly until the side walls form a Vee in cross-section.