The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1976
Filed:
Jan. 02, 1975
James Vincent DiLorenzo, Piscataway, NJ (US);
William Charles Niehaus, Murray Hill, NJ (US);
Lawrence John Varnerin, Jr, Watchung, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a 'clump' of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile