The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 1976

Filed:

Jun. 18, 1975
Applicant:
Inventors:

Takashi Okada, Yamato, JA;

Kimitake Utsunomiya, Tokyo, JA;

Assignee:

Sony Corporation, Tokyo, JA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06G / ;
U.S. Cl.
CPC ...
307229 ; 328144 ;
Abstract

A non-linear amplifier is disclosed including an amplifying transistor for amplifying an input signal, an output amplified signal being derived from the amplifying transistor. A series of PN junctions is provided to supply a determined bias voltage to the amplifying transistor. An emitter-follower stage, comprised of at least one emitter-follower transistor amplifier, is connected to an input of the amplifying transistor for compensating the bias voltage applied thereto. In one embodiment, the input signal is amplified by a power of n wherein n PN junctions are connected in parallel with (n-1) emitter-follower transistor amplifiers. The input signal is supplied through the (n-1) emitter-followers to the base electrode of the amplifying transistor. In an alternative embodiment, the input signal is amplified by a power of 1/n wherein (n-1) PN junctions are coupled to the emitter electrode of the amplifying transistor and (n-1) emitter-follower transistors are connected in cascade to the base electrode of the amplifying transistor. In this latter embodiment, an output transistor is connected to the output of the emitter-follower stage.


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