The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1976
Filed:
Oct. 15, 1974
Applicant:
Inventors:
Ichiro Asao, Kawasaki, JA;
Yoshimasa Ohki, Kawasaki, JA;
Isamu Akasaki, Kawasaki, JA;
Masafumi Hashimoto, Kawasaki, JA;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 148-15 ; 156610 ; 156613 ; 156614 ; 357 17 ; 357 30 ;
Abstract
A nitrogen-doped n-type epitaxial layer of GaP grown from a vapor phase is heated at a temperature ranging from 740.degree. to 1000.degree.C for a selected period of time depending on the temperature. The heat treatment is carried out in H.sub.2, N.sub.2 or Ar in the presence of Ga and P vapors. Alternatively, a protection coating of SiO.sub.2, Si.sub.3 N.sub.4 or Al.sub.2 O.sub.3 is formed on the epitaxial layer prior to the heat treatment.