The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 1976

Filed:

Jul. 23, 1975
Applicant:
Inventors:

James H Lee, Wappingers Falls, NY (US);

Akella V Satya, Wappingers Falls, NY (US);

Ashwin K Ghatalia, Essex Junction, VT (US);

Donald R Thomas, Westford, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
3241 / ; 324 51 ;
Abstract

A semiconductor defect monitoring structure employs a series of electrically testable serpentine stripe patterns having different widths and spacing in order to determine the distribution of the density of defects by size. Metal stripe patterns are superposed and rotated 90.degree. with respect to diffusion stripe patterns in a semiconductor wafer. A set of four field effect transistor devices are connected to each stripe pattern in such a way that tests may be made for all defects without interference between adjacent patterns. The defect monitoring structure helps to determine defects such as opens in diffusion and metallization, shorts in metallization, shorts in diffusion, pinholes in a thin oxide, and pinholes in a thick oxide.


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