The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1976
Filed:
Mar. 13, 1975
William R Livesay, San Diego, CA (US);
Electron Beam Microfabrication Corporation, San Diego, CA (US);
Abstract
Apparatus and a corresponding method for supporting a wafer of target material for exposure to a beam or pattern of electrons with little or no distortion of the electric field used to accelerate the electrons from a cathode to the target. In one embodiment, the target wafer is supported on a flat pedestal some distance above a surrounding anode structure, and is insulated from the pedestal by a thin dielectric sheet. A bias voltage applied between the wafer and the pedestal and anode structure is selected to minimize distortion of the electric field, and also serves to secure and flatten the wafer against the pedestal by electrostatic attraction. Alternatively, the wafer may be held in position by a retaining lip projecting over the edges of the wafer, the lip having a conductive surface layer insulated by a dielectric layer from the remainder of the lip and from the wafer. Distortion of the electron-accelerating field is minimized by applying an appropriate bias voltage between the wafer and the conductive layer on the lip.