The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 1976

Filed:

Aug. 12, 1974
Applicant:
Inventor:

George A Antypas, Palo Alto, CA (US);

Assignee:

Varian Associates, Palo Alto, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01S / ;
U.S. Cl.
CPC ...
357 16 ; 148175 ; 313 94 ; 313373 ; 331 / ; 357 18 ; 357 30 ; 357 61 ;
Abstract

An epitaxial layer of a quaternary III-V alloy of Ga, In, As, and P has its constituents proportioned for lattice matching to a substrate having a lattice constant falling within the range of 5.45 to 6.05 A. In addition, the constituents of the alloy are proportioned to provide a selected bandgap energy falling within the range of 2.23 to 0.35 electron volts; this corresponds to wavelengths of 0.55 to 3.5 microns. Near perfect lattice matched heterojunctions are provided between the epitaxial layer and the lattice matched substrate; these are useful for providing improved photocathodes and lasers, particularly in the infrared range of wavelengths between 0.8 and 2.0 microns.


Find Patent Forward Citations

Antypas, George. (1976). Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched (U.S. Patent No. 3982261). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3982261

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…