The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1976
Filed:
Sep. 29, 1969
Hall E Jarman, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A process for etching high depth-to-width ratio grooves in the surface of monocrystalline germanium-comprising semiconductor material by orienting the material so that the surface to be etched is parallel to a (110) plane of the crystal structure; orienting an etching mask on that surface such that the length of the groove to be etched is parallel to a (111) plane of the crystal which is normal to said surface; and subjecting the semiconductor material to a preferential etchant which attacks fastest in a [110] direction of a germanium crystal and slowest in a [111] direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile