The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1976
Filed:
May. 27, 1975
Robert Leroy Barns, Berkeley Heights, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
z-face quartz of good quality suitable for piezoelectric applications can be grown at rates near 35 mil/da at p-T conditions easily accessible in commercial autoclaves. The growth conditions are predictable from previous systematic studies of growth rate. Cracking of grown crystals either during growth or in crystal processing can be severe and can account for as much as 15-50% yield loss. However, much of this loss can be reduced by carefully screening seeds for strain using the new polariscopic technique of the invention. Strain (and cracking) are severe with growth on highly strained seeds and at high growth rates. Carefully choosing seeds reduces the strain in the grown material for a given growth rate.