The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1976
Filed:
Mar. 20, 1974
Hiroto Kawagoe, Kodaira, JA;
Kosei Nomiya, Tokyo, JA;
Hitachi, Ltd., , JA;
Abstract
In order to provide compensation for changes in the ambient temperature and supply voltage for an electronic circuit, such as a pulse generator circuit made up of MOSIC structure, a field effect transistor circuit includes a high value resistor and an enhancement and depletion type MOSFET, connected in parallel. The drain electrodes of the MOSFETs are connected to the power supply through the resistor and are also connected to the gate electrode of a depletion type load MOSFET which is the load transistor for an enhancement type MOSFET. When the compensating circuit is provided in a pulse generator circuit, instability in the oscillating frequency of the pulse generator due to changes in ambient temperature and supply voltage is overcome and the difference in the oscillating periods for the various MOSICs are decreased.