The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1976
Filed:
Sep. 06, 1973
Vadim Ivanovich Pavlichenko, Kalingrad, Moskovskaya oblast, SU;
Other;
Abstract
A semiconductor light source on the basis of n-type silicon carbide single crystal, wherein an epitaxial silicon carbide film of the same type is disposed on the basic single crystal, a p-n junction with a depth of 0.1-2 .mu.m is arranged on the surface of this film, the basic silicon carbide single crystal having a concentration of uncompensated donor atoms of 5.sup.. 10.sup.17 - 5.sup.. 10.sup.18 cm.sup.-.sup.3 and a concentration of atoms of secondary impurities not greater than 2.sup.. 10.sup.18 cm.sup.-.sup.3, while the epitaxial film has a concentration of uncompensated donor atoms of 0.8.sup.. 10.sup.18 -3.sup.. 10.sup.18 cm.sup.-.sup.3, a concentration of atoms of secondary impurities of 0.4.sup.. 10.sup.17 -1.5.sup.. 10.sup.17 cm.sup.-.sup.3 and a thickness of 5-100 .mu.m.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile