The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1976
Filed:
Sep. 23, 1974
James L Dunkley, Scottsdale, AZ (US);
Victor K Liang, Phoenix, AZ (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A collector diffused isolation transistor wherein the normal buried layer in the substrate of the device is utilized as a collector region, an isolation region of the same conductivity type as the buried layer being formed by ion implantation of suitable atoms in the buried layer region with a second similar ion implantation in the surface of the epitaxial layer of second conductivity type grown over the substrate and buried layer, the collector diffused isolation region being formed by the up diffusion of the lower ion implanted region into the grown layer and the down diffusion of the upper ion implanted region into the grown layer so that the up and down diffusions overlap. Complimentary devices such as PNP and NPN devices are made on the same substrate utilizing this novel technique.