The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1976
Filed:
Feb. 14, 1975
Else Kooi, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of making a semiconductor device is described in which a selected surface portion of a silicon wafer is masked against oxidation, and then the surface is oxidized to grow a thermal oxide which sinks into the silicon surface at the unmasked areas, with the result that the masked silicon remains as a mesa surrounded by the sunken oxide. Then semiconductor devices can be provided by various techniques in the silicon mesa. The advantages include the provision of flat junctions, as distinguished from dish junctions in the prior art, reduced capacitance resulting from the extension of the device interconnections over the silicon wafer, and a flatter surface on top of the wafer reducing the risk of damage to the deposited interconnections.