The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1976
Filed:
Dec. 13, 1971
Applicant:
Inventors:
Keith Harlow Nicholas, Reigate, EN;
Ronald Alfred Ford, Crawley, EN;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 23 ; 357 91 ; 148-15 ; 357 41 ;
Abstract
A semiconductor device is described containing at least two insulating gate field effect transistors in a common wafer. One of the transistors exhibits high gain but the other transistor exhibits low gain as a result of selectively implanting into its channel neutral ions and crystal damage which reduce the effective mobility of charge carriers therein. In one embodiment, the low gain transistor serves as a load for the high gain transistor. In a second embodiment, the low gain transistor is a parasitic transistor formed between adjacent circuit elements.