The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1976
Filed:
Feb. 11, 1975
Applicant:
Inventor:
Joseph Gijsbertus Van Lierop, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29591 ; 148-15 ; 148187 ; 156-3 ; 156 17 ; 427 88 ;
Abstract
A method of manufacturing semiconductor devices having one or more insulated gate field effect transistors in which a sunken oxide layer is obtained by local oxidation. In those cases in which above a doped zone a thin insulating layer is necessary, for example because said layer forms the dielectric of a capacitor, the invention provides a simplification of the manufacture in that at area in question a thicker sunken oxide layer is first provided which is removed fully or partly in a later stage so as to be able to obtain the desired thinner layer.