The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 1976

Filed:

Dec. 30, 1974
Applicant:
Inventors:

Yahei Takase, Itami, JA;

Akira Kawakami, Itami, JA;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 20 ; 357 39 ; 357 86 ;
Abstract

In a PNPN semiconductor device comprising a cathode base layer, a cathode emitter layer and an auxiliary emitter layer disposed on one of its main faces, an auxiliary electrode is disposed on the cathode base layer adjacent to a cathode electrode and a diode is formed in the cathode base layer between a gate electrode and the auxiliary electrode. The diode includes one semiconductor layer formed of the adjacent portion of the cathode base layer, an electrode connected to the gate electrode and a PN junction forwardly biased with a reverse bias applied to the gate electrode.


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Takase, Yahei. (1976). Pnpn semiconductor device (U.S. Patent No. 3967294). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3967294

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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