The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1976
Filed:
Oct. 11, 1974
Gunter Berndes, Heppenheim, DT;
Horst Krassin, Hemsbach, DT;
BBC Brown Boveri & Company Limited, Baden, CH;
Abstract
A two-way semiconductor switch, commonly known as a Triac comprises a semiconductor body having at least five superposed zones alternating in conductivity types, the three inner zones forming the basic interior structure and the outer zones, each of different conductivity types, located at the opposite end faces of the semiconductor body forming the emitter or anode boundary zones respectively, and having a main electrode in ohmic contact therewith. One end face also includes first and second control zones of different conductivity types spaced laterally from the outer zones of different conductivity types at that end and in ohmic contact with a control electrode common to both control zones. The penetration depth of the second control zone and/or the penetration depth of the outer zone at the opposite end face of the semiconductor body structure having the same type of conductivity as the second control zone are made greater than the penetration depth of the outer zone of the same type of conductivity at the end face at which the second control zone is located, and a greater emitter short-circuit density is provided at the main electrode in contact with the opposite end face than at the other main electrode, in order to maintain commutation stability.