The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 1976

Filed:

Dec. 23, 1974
Applicant:
Inventor:

Shigeru Mitsui, Amagasaki, JA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M / ;
U.S. Cl.
CPC ...
321 / ; 307300 ;
Abstract

A semiconductive body in the form of a rectangular parallelepiped is formed of a semiconductive material, such as gallium arsenide or indium phosphide or Group IV elements, having an electric field-to-current characteristic either including a nonlinear region, such as a negative resistance region; or nonlinear and partly including a saturated region. A dc biasing electric field is applied across two opposite faces of the substrate while an ac input electric field is applied across two opposite faces perpendicular to the first faces of the semiconductive body to form a resultant electric field variable in a portion of the characteristic including the nonlinear or saturated region. This variation in the resultant field causes a current component flowing in the direction of the biasing field through the body to have a frequency equal to a multiple of that of the ac input field.


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