The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1976
Filed:
Aug. 27, 1974
Applicant:
Inventors:
Hermann Kniepkamp, Munich, DT;
Guenter Winstel, Ottobrunn, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 29572 ; 148171 ; 148172 ; 156 17 ; 313483 ; 357 17 ; 357 55 ; 357 61 ; 357 88 ;
Abstract
A process for producing semiconductor luminescence diodes wherein an epitaxial layer is deposited on a monocrystal composed of a semi-insulating semiconductor material, a portion of the monocrystal at least up to the level of the epitaxial layer is removed to leave a border of monocrystal material and exposed epitaxial layer, and a dopant is diffused into this exposed epitaxial layer and the remaining border of the monocrystal material to produce a pn-junction in the epitaxial layer, and finally suitable electrodes are applied to the thus redoped zone of the epitaxial layer.