The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 1976

Filed:

Dec. 24, 1974
Applicant:
Inventors:

Yoshimi Tanaka, Kyoto, JA;

Hirotsugu Hattori, Takatsuki, JA;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148188 ; 427 88 ;
Abstract

A method of manufacturing semiconductor devices is provided which comprises the steps of depositing a coating of platinum on the surface of a silicon substrate prior to the formation of a plated nickel layer thereon, plating a layer of nickel on the silicon substrate coated with platinum, and then subjecting the structure to the process of heat treatment to thereby cause the platinum to diffuse into the silicon substrate, whereby the platinum acts to increase the adhesion strength of the plated nickel layer on the silicon substrate and further the platinum element diffused into the silicon substrate serves as a lifetime killer of carriers to thereby improve the switching characteristic of the semiconductor device.


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