The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1976
Filed:
Oct. 17, 1974
Hirofumi Namizaki, Amagasaki, JA;
Hirofumi Kan, Amagasaki, JA;
Abstract
N type Ga.sub.0.7 Al.sub.0.3 As, N type GaAs, N type Ga.sub.0.7 Al.sub.0.3 As and P type Ga.sub.1-0.3 Al.sub.0.3 As are epitaxially grown on an N type GaAs substrate in the named order one after another to form superposed layers. A selected portion of the uppermost layer is etched away along with those portions of the following two layers and one part of the lowermost layer located below the selected uppermost layer portion. P type Ga.sub.1-0.3 Al.sub.0.3 As highly doped with zinc is epitaxially grown to fill the removed portions of the layers. Then the zinc is diffused into the adjacent portions of the layers to form a radiative recombination region of a layer on that portion of the GaAs layer converted to the P type.