The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 1976

Filed:

Sep. 13, 1974
Applicant:
Inventors:

Joseph M Ballantyne, Ithaca, NY (US);

Chung L Tang, Ithaca, NY (US);

Lawrence Bryce Rhodes, Ithaca, NY (US);

John J Turner, Ithaca, NY (US);

Ji Liang Yang, Ithaca, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 43 ; 427273 ; 2351511 ;
Abstract

A method of making optical gratings by the use of a Scanning Electron Microscope wherein (1) a substrate having a thin film of electron resist thereon is exposed in adjacent areas by an electron dosage and the amount of such dosage and the depth of the thin film are selected such that energy deposition in regions between adjacent exposed areas in said electron resist is below the threshold sensitivity of said resist for development, (2) the development time of the resist is made an inverse function of the electron dosage, and/or (3) the period of the grating is controlled by use of a standard scanning format.


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