The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1976
Filed:
May. 10, 1974
David F Allison, Los Altos, CA (US);
Signetics Corporation, Sunnyvale, CA (US);
Abstract
A high inverse gain semiconductor device including a one conductivity semiconductor substrate having a major surface and a buried region formed in said substrate of relatively high concentration one conductivity impurities extending to said major surface. A one conductivity semiconductor layer is formed on said major surface, said layer having a planar surface. An opposite conductivity base region is formed in said layer overlying said buried region and extends to said planar surface. The base region has an outwardly notched handle-shaped portion extending outward from said base region into said body and extending to said planar surface. A one conductivity additional region formed entirely within said opposite conductivity base region extends within said base region to form a relatively uniform base region exclusive of said handle-shaped portion having a relatively narrow base width between said additional region and said layer. The layer, base and additional region form a bilateral transistor capable of substantial forward gain when the additional region is utilized as an emitter and capable of relatively high inverse gain when said additional region is utilized as a collector.