The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1976
Filed:
Sep. 11, 1974
Applicant:
Inventors:
Jean Marine, Grenoble, FR;
Huguette Rodot, Meudon-Bellevue, FR;
Assignees:
Commissariat a l'Energie Atomique, Grenoble, FR;
Agence Nationale de Valorisation de la Recherche (ANVAR), Meudon-Bellevue, FR;
Agence Nationale de Valorisation de la Recherche Anvar, Meudon-Bellevue, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 91 ; 427 66 ;
Abstract
A wafer of the semiconducting compound ZnTe is subjected to at least one bombardment by a magnesium ion flux, the energy and density of the bombardment or bombardments being such as to obtain a desired concentration of magnesium ions in the portion of the semiconductor to be doped and this is followed by a thermal annealing operation, the concentration of magnesium being such as to obtain an alloy having the formula Mg.sub.X Zn.sub.1.sub.-X Te with 0<X<1.