The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1976
Filed:
Oct. 03, 1974
Ingrid E Magdo, Hopewell Junction, NY (US);
Steven Magdo, Hopewell Junction, NY (US);
IBM Corporation, Armonk, NY (US);
Abstract
A planar integrated circuit structure having a dielectrically isolated Schottky Barrier contact. The structure has pockets of silicon surrounded by isolating regions of silicon dioxide extending from a planar surface, the silicon dioxide regions and silicon pockets being substantially coplanar at said surface. A layer of dielectric material, such as silicon nitride or a composite of silicon nitride over silicon dioxide, covers the surface. There is at least one opening extending through the dielectric layer to a coincident silicon pocket; the opening has larger lateral dimensions than said pocket so as to expose the pocket and a portion of the silicon dioxide region surrounding the pocket. A metallic layer in this opening forms a Schottky Barrier contact with the exposed silicon.