The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1976
Filed:
Jun. 19, 1975
Applicant:
Inventors:
Ingrid Emese Magdo, Hopewell Junction, NY (US);
Steven Magdo, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29577 ; 357 43 ;
Abstract
A method for fabricating both bipolar as well as complementary MOS field effect transistors, i.e., BI-CMOS transistors in the same semiconductor substrate. The preferred embodiment of the method provides bipolar and CMOS transistors having breakdown voltages (BV.sub.ceo) in excess of 10 volts and CMOS devices having no latchup problems, with a minimum number of processing steps. The method also contemplates the formation of auxiliary devices such as resistors and Schottky Barrier diodes.