The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1976
Filed:
Dec. 30, 1974
Harsaran Singh Bhatia, Wappingers Falls, NY (US);
Gerald Dennis O'Rourke, Poughkeepsie, NY (US);
Siegfried K Wiedmann, Stuttgart, DT;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A complementary field effect transistor structure which eliminates the problems caused by parasitic currents between devices. The currents are contained within parasitic bipolar devices formed between the various regions of the FETs. A portion of the collector current of the parasitic bipolar devices is drained away so that the loop gain is less than one. This is achieved by placing guard regions of conductivity type which are the same as the channel type of the transistors adjacent said regions. The guard region is preferably in the form of a continuous ring around its associated FET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile