The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1976
Filed:
Mar. 21, 1975
Georges Bert, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A memory cell as required for use in the building of integrated memories, which contains bistable trigger stages formed by two transistors, with a high operational reliability, a low power consumption and an access time of less than 0.01 microseconds for a store of 64 elements, is provided. To this end, low-consumption field-effect transistors are chosen, obtained by the ion implantation of an N-type channel, in order, in each cell, to form, in addition to the two transistors of the trigger stage, a pair of transistors connected as amplifier-followers. The selection of a cell is effected by raising the potential on the word line connected to the sources of the transistors of the trigger stage.