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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 3955181 B1

PDFFull Text
Date of Patent:
May. 04, 1976

Filed:

Nov. 19, 1974

Self-refreshing random access memory cell

Applicant:
Inventor:

Joseph H Raymond, Jr, Houston, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Levine; Harold

Connors, Jr.; Edward J.

Graham; John G.

Primary Examiner:

Stuart N Hecker

Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
3401 / ; 3401 / ; 307238 ;
Abstract

A memory cell comprising field effect transistors for use in a random access memory array. The cell is of the dynamic type wherein data is stored on capacitive elements, and is self-refreshing; no circuitry external to the array is needed for refresh, other than clock sources. Five MOS field effect transistors are employed, with two non-overlapping clocks, a data buss for each row of the array and one address line for each column. The transistors and associated capacitors are arranged to reinforce a stored '1' or '0'.

Find Patent Forward Citations

Raymond, Jr, Joseph. (1976). Self-refreshing random access memory cell (U.S. Patent No. 3955181). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3955181

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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