The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1976
Filed:
Dec. 04, 1974
Applicant:
Inventors:
Thomas A Myles, Tonawanda Township, NY (US);
Curtis E Zimmer, Youngstown, NY (US);
Assignee:
The Carborundum Company, Niagara Falls, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148189 ; 252950 ; 252951 ; 264 54 ; 106 69 ;
Abstract
Solid diffusion sources for phosphorus doping comprise from 10 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. Such materials may be hot-pressed to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7, the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 750 psi to about 6,000 psi pressure during hot-pressing, at temperatures from about 800.degree.C to about 1450.degree.C.