The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1976
Filed:
Jul. 11, 1974
Applicant:
Inventors:
Erhard Sirtl, Munich, DT;
Cedric G Currin, Midland, MI (US);
Assignee:
Dow Corning Corporation, Midland, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 60 ; 357 30 ; 357 88 ;
Abstract
Silicon semiconductor device array, e.g. solar cell device or array of devices; formed from bulk silicon deposited in the form of columnar crystallites bounded by substantially vertical grain boundaries. Junctions are formed across crystallites and along grain boundaries. The grain boundaries are made substantially non-conductive by diffusion from one side of the sheet. P.sup.+ and n.sup.+ layers are provided as contact areas for electrodes. Deposition of silicon takes place directly from decomposition of silicon-containing vapors onto a non-silicon substrate sheet.