The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1976
Filed:
Aug. 14, 1973
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 16 ; 357 17 ; 357 23 ; 357 60 ;
Abstract
A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type silicon, the film being formed to a thickness less than 25A., for example, and then further depositing thereon a tin oxide film. It was found that adoption of the abovementioned (100) orientation reduces the reverse saturation current and thus the dark current of the device, with the result that the open voltage of the device is accordingly increased. It was also found that proper choice of specific resistivity of the substrate improves linearity of the photoelectric characteristic.