The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1976
Filed:
Nov. 08, 1973
Adir Jacob, West Roxbury, MA (US);
LFE Corporation, Waltham, MA (US);
Abstract
A organo-halide composition for use in the manufacture of semiconductor devices. To enable the removal of all the photoresist material along with its inorganic contamination, after development and etching of preselected portions of an oxide layer on a semiconductor slice, the material is exposed to a low pressure (few torr) rf generated 'cold' plasma (200.degree.-300.degree.C), where the plasma is a homogeneous gaseous mixture of oxygen and organohalides. The organo-halide preferably is a binary or ternary mixture where each component preferably includes no more than two carbon atoms per molecule and is desirably fully halogensubstituted. One of the substituents should include predominantly chlorine, while the other should include a predominance of either fluorine or fluorine-bromine combinations.