The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1976
Filed:
Mar. 15, 1973
Applicant:
Inventors:
Assignee:
Kogyo Gijutsuin, , JA;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 15 ; 357 41 ; 357 90 ; 148187 ;
Abstract
Disclosed herein is an improved field-effect transistor, having its effective base width determined by the impurity diffusion length or by a difference between impurity diffusion lengths for providing a reduced parasitic capacitance between gate and drain, and/or between gate or drain and other electrode. Disclosed also is a construction for effectively leading out an electrode from the base region and or source region, and methods adapted to manufacture the above-mentioned field-effect transistor.