The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 1976

Filed:

Feb. 12, 1973
Applicant:
Inventors:

Konrad Reuschel, Vaterstetten, DT;

Arno Kersting, Erlangen, DT;

Wolfgang Keller, Pretzfeld, DT;

Assignee:

Siemens Aktiengesellschaft, Munich, Erlangen, Berlin, DT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29D / ; B01J / ; B29C / ; B29D / ;
U.S. Cl.
CPC ...
264248 ; 156242 ; 228196 ; 228263 ; 264 81 ; 427 51 ; 427 86 ; 427 87 ; 427249 ;
Abstract

Described are two methods of producing a hollow body, comprised of semiconductor material, especially silicon, by precipitation from a gaseous compound of said semiconductor material upon the surface of a heated carrier body, which after a sufficiently thick layer of semiconductor material has been precipitated, is removed again without damaging said layer. One method is characterized by using a hollow carrier body, open at least at two opposite sides. In one embodiment, prior to the precipitation of the semiconductor material, one of the open sides of the carrier body is covered by a wafer from the same semiconductor material whose shape corresponds to the open side. Thereafter, the semiconductor material is precipitated from the gaseous compound until the desired layer thickness and a gas-tight connection is obtained between the layer and the covering semiconductor material. The second method precipitates a semiconductor layer and thereafter welds a cover on one or both open ends the tube.


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