The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 1976

Filed:

Nov. 05, 1971
Applicant:
Inventors:

Dean Robert Collins, Dallas, TX (US);

Lewis T Clairborne, Dallas, TX (US);

Assignee:

Texas Instruments Inc., Dallas, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; G11C / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
3072 / ; 307304 ; 357 24 ; 357 41 ; 333 / ;
Abstract

Semiconductor charge devices are defined to effect a serial-to-parallel conversion of analogue signal information. In one aspect of the invention, a digital signal is extracted from an analogue noise environment by a shift register correlator comprising a bucket-brigade configuration of field-effect transistors in combination with gating field-effect transistors which are effective to weight the amplitude of the data in corresponding bits of the shift register. The gates of the gating transistors are selectively connected to diffused regions of transistors of the bucket-brigade delay line to effect parallel tapped outputs therefrom. The weighted signals from the gating transistors are summed at a common terminal to form the auto-correlated output. In a different aspect of the invention, the analogue delay line is effected by a charge-coupled shift register, parallel taps being obtained from diffused regions under selected electrodes of the shift register ohmically connected to gates of the gating field-effect transistors.


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