The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1976
Filed:
Jul. 07, 1975
Dawon Kahng, Bridgewater, NJ (US);
Joseph Raymond Ligenza, Califon, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Charge conditions are modified in a wafer including a silicon dioxide layer on a silicon substrate by introducing a distribution of tantalum into the silicon dioxide layer. The distribution of tantalum can be adapted to store negative charge, to getter sodium or to produce nonannealable fast surface states. A distribution of tantalum at the silicon-silicon dioxide interface produces nonannealable fast surface states. A distribution of tantalum in the silicon dioxide subjected to electrical and temperature stress can store negative charge and getter sodium. An n-channel insulated gate field effect transistor utilizes a silicon dioxide gate insulator which includes centrally located therein a region which is rich in treated tantalum.