The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1976
Filed:
Apr. 26, 1973
Surinder Krishna, Ballston Lake, NY (US);
Chang Kwei Chu, Pittsburgh, PA (US);
Westinghouse Electric Corporation, Pittsburgh, PA (US);
Abstract
A plasma thyristor circuit is provided for generating high power, ultra-short duration electrical signals. A silicon semiconductor body has first, second and third impurity regions therein with a PN junction formed at the transition between the first and second or the second and third impurity regions. The second impurity region has an impurity concentration of less than about 5 .times. 10.sup.14 atoms/cm.sup.3, and a width of greater than about 80 microns. The ratio of the punch-through voltage of the second impurity region to the reverse breakdown voltage of the PN junction is between 0.3 and 0.7. Power sources apply both a reverse bias voltage across the body greater than said punch-through voltage and less than said reverse breakdown voltage, and a current to the body having a density greater than the saturation current density of the second impurity region.