The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1976
Filed:
Mar. 03, 1975
Bruce R McAvoy, Pittsburgh, PA (US);
Michael C Driver, Trafford, PA (US);
Westinghouse Electric Corporation, Pittsburgh, PA (US);
Abstract
A high frequency, Schottky barrier gate, field-effect transistor is provided with a substantially constant impedance over a broadband of frequencies. The transistor is comprised of a thin dielectric layer providing an effective dielectric constant at gate and drain contacts greater than .sqroot.2. The dielectric layer is supported on the major surface of a conductor substrate, and is preferably 5 microns in thickness and has a dielectric constant greater than about 5. The transistor is also comprised of a thin semiconductor layer of less than about 2 microns in thickness at least at gate portions with an N-type concentration of between about 5 .times. 10.sup.14 and 5 .times. 10.sup.17 carriers/cm.sup.3. The gate contact of the transistor is an elongated Schottky barrier contact adjoining the semiconductor layer spaced between elongated source and drain contacts which make ohmic contact with the semiconductor layer. Means are also provided to maintain the source contact at substantially the same RF potential as the conductor substrate.