The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1976
Filed:
Apr. 11, 1974
James M Jaffe, Southfield, MI (US);
General Motors Corporation, Detroit, MI (US);
Abstract
A method of making thin diaphragms having an accurately controllable thickness for semiconductor pressure responsive devices. An oxide coating is thermally grown in selected regions on the front side of a silicon wafer. The oxide extends into the wafer at an extremely accurate and controllable depth to form a groove in the wafer front side defined by the selected regions. Portions of the wafer are then etched from the back side until the bottom of the groove is reached thereby providing a diaphragm having a thickness equal to the accurately reproducible depth of the groove.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile