The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 1976
Filed:
Feb. 11, 1974
Bohumil Polata, Los Altos, CA (US);
Signetics Corporation, Sunnyvale, CA (US);
Abstract
A majority charge carrier semiconductor structure including a relatively heavily doped n type support layer, a second n type layer formed on the support layer and having a relatively light doping, a p layer formed on the second n layer, and a third n type layer having a relatively heavy doping formed atop the p layer. When voltage means is applied between top and support layers principal current flow is by majority charge carriers in either direction determined by the polarity of a pre-determined voltage. Current flow occurs substantially below the critical electric field, and free of avalanche multiplication or tunneling. In alternate embodiments the doping impurity concentration may be varied to alternately provide a device wherein the magnitude of voltage reference which determines current flow in one direction or in the opposite direction may be symmetrical, asymmetrical or highly asymmetrical.