The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1976
Filed:
Aug. 14, 1974
John A Ostop, Greensburg, PA (US);
Paul M Kisinko, Greensburg, PA (US);
Joseph F Henry, Palatine, IL (US);
Westinghouse Electric Corporation, Pittsburgh, PA (US);
Abstract
A bipolar transistor is provided with both high voltage and high frequency capabilities. A semiconductor body of a resistivity between 10 and 100 ohm-cm forms the collector region of the transistor and has an epitaxial semiconductor layer grown on a major surface thereof of a resistivity between about 0.5 and 10 ohm-cm and of a thickness between about 20 and 100 microns and of a conductivity type opposite from the body. At least one emitter region and integral emitter electrode are alloyed into the epitaxial layer preferably in annular rings. A base region is formed in the epitaxial layer between the emitter and semiconductor body and around the emitter region, said base region having a minimum thickness between the emitter region and the semiconductor body in the interior of the body of less than 20 and preferably between 5 and 10 microns. Base electrodes are alloyed into the epitaxial layer preferably spaced from the emitter region and emitter electrode preferably in concentric annular rings and a center circular member.