The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1976
Filed:
Nov. 26, 1973
Gyoji Suzuki, Asaka, JA;
Takeshi Tomotsu, Asaka, JA;
Fuji Photo Film Co., Ltd., Minami-ashigara, JA;
Abstract
A method of forming patterns on a semiconductor element is disclosed comprising the steps of (a) depositing a coating of silicon nitride, borosilicate glass, or phosphosilicate glass on the surface of a semiconductor substrate, (b) applying a photosensitive etching solution layer to the coating and drying it, (c) irradiating the substrate with ultraviolet radiation through a photomask having a required pattern to decompose the photosensitive solution and etch the coating, and (d) removing the photosensitive solution, the decomposed material, and the reaction product of the decomposed material and the coating with an organic solvent. The photosensitive etching solution consists of a compound which may be decomposed by light to a material which etches the coating, or a compound obtained from the reaction between the photodecomposed material and other material in the solution which etches said coating.