The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1976
Filed:
Nov. 15, 1973
Applicant:
Inventors:
Rudolf Bauerlein, Erlangen, DT;
Dieter Uhl, Erlangen, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01l / ;
U.S. Cl.
CPC ...
148-15 ; 29585 ; 357 91 ;
Abstract
The radiation resistance of silicon transistors with a silicon oxide coating is improved by irradiating the semiconductor device with electrons at an energy below 150 keV and a dose between 10.sup.9 and 10.sup.12 rad at the boundary layer between the silicon and silicon oxide coating. The temperature of the semiconductor device is maintained at a temperature of between 150.degree. and 450.degree.C during irradiation thereof.
Bauerlein, Rudolf. (1976). Method of improving the radiation resistance of silicon transistors with (U.S. Patent No. 3935033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3935033
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile