The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1976
Filed:
Jul. 17, 1974
Wilson David Pace, Tempe, AZ (US);
Motorola, Inc., Chicago, IL (US);
Abstract
A bilateral zener diode is described having improved terminal characteristics including a low noise factor, a predictable breakdown voltage level in the reverse breakdown mode within plus or minus 3 percent, and providing a sharp reference voltage which is substantially independent of diode current. This bilateral conducting diode is achieved by utilizing a collector ring diffusion of the same conductivity type as the anode diffusion, but spaced from both the anode diffusion and the cathode diffusion. In the forward bias conduction mode, the flow of current from the anode to the cathode is collected by the collector ring and returned to the cathode providing a forward transfer efficiency which is typically 90 percent.